Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT
نویسندگان
چکیده
The urgent need for renewable energy source has led to a significant interest in triboelectric nanogenerators (TENGs) as new technology. In contrast traditional polymer TENGs, semiconductor direct-current TENGs are more suitable miniaturization and integration with electronic devices. This study proposes friction material made of depletion mode GaN high electron mobility transistors (HEMTs), which exhibit superior properties such two-dimensional gas concentration. By sliding titanium sheet on GaN-based heterostructure, we have designed metal-semiconductor nanogenerator that achieved voltage up 45.5 V peak power density 2.32 W/m2. generator can be used supply DC 14 LEDs series drive digital watch directly. particular, the generation direct current is predominantly influenced by surface states undoped cap produce large number electrons associated an additional electric field direction created u-GaN/AlGaN/AlN/GaN heterostructure HEMTs. research not only introduces nitride HEMTs interface but also elucidates mechanism HEMT TENGs.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2023
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0158240